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| FDD6696/FDU6696 December 2002 FDD6696/FDU6696 30V N-Channel PowerTrench(R) MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed. Features * 50A, 30 V RDS(ON) = 8.0 m @ V GS = 10 V RDS(ON) = 10.7 m @ V GS = 4.5 V * Low gate charge (17nC typical) * Fast switching * High performance trench technology for extremely low RDS(ON) Applications * DC/DC converter * Motor drives D D G S I-PAK (TO-251AA) GDS G D-PAK TO-252 (TO-252) S T A=25oC unless otherwise noted Absolute Maximum Ratings Symbol V DSS V GSS ID Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25C @TA =25C Pulsed (Note 3) (Note 1a) (Note 1a) (Note 3) (Note 1a) (Note 1b) Ratings 30 16 50 13 100 52 3.8 1.6 -55 to +175 Unit s V A PD Power Dissipation @TC=25C @TA =25C @TA =25C W TJ , TSTG Operating and Storage Junction Temperature Range C Thermal Characteristics RJ C RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1) (Note 1a) (Note 1b) 2.9 40 96 C/W Package Marking and Ordering Information Device Marking FDD6696 FDU6696 Device FDD6696 FDU6696 Package D-PAK (TO-252) I-PAK (TO-251) Reel Size 13'' Tube Tape width 12mm N/A Quantity 2500 units 75 (c)2002 Fairchild Semiconductor Corporation FDD6696/FDU6696 Rev D (W) FDD6696/FDU6696 Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions (Note 2) Min Typ Max Unit s mJ A Drain-Source Avalanche Ratings EAS IAS Drain-Source Avalanche Energy Drain-Source Avalanche Current Single Pulse, V DD = 15 V, ID=13A 165 13 Off Characteristics BV DSS BVDSS TJ IDSS IGSSF V GS(th) VGS(th) TJ RDS(on) Drain-Source Breakdown V GS = 0 V, ID = 250 A Voltage Breakdown Voltage Temperature ID = 250 A, Referenced to 25C Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage (Note 2) 30 23 10 100 1 2 -5 6.7 8.6 10.2 51 1715 410 180 3 V mV/C A nA V mV/C m V DS = 24 V, V GS = 16 V, V GS = 0 V V DS = 0 V On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) V DS = V GS , ID = 250 A ID = 250 A, Referenced to 25C V GS = 10 V, ID = 13 A V GS = 4.5 V, ID = 12 A V GS = 10 V, ID = 13 A, TJ =125C V DS = 5 V, ID = 13 A V DS = 15 V, f = 1.0 MHz V GS = 0 V, 8.0 10.7 15.0 gFS Ciss Coss Crss RG td(on) tr td(off) tf Qg Qgs Qgd IS V SD trr Qrr Notes: S pF pF pF 23 9 43 31 24 ns ns ns ns nC nC nC 13 A V nS nC Dynamic Characteristics V GS = 15 mV, V DD = 15 V, V GS = 10 V, f = 1.0 MHz ID = 13 A, RGEN = 6 1.3 13 4 27 17 Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge V DS = 15V, V GS = 5 V ID = 13 A, 17 5 6 Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward V GS = 0 V, IS = 13 A Voltage Diode Reverse Recovery Time IF = 13 A, Diode Reverse Recovery Charge diF/dt = 100 A/s (Note 2) 0.8 27 15 1.2 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while R CA is determined by the user's board design. a) RJA = 40C/W when mounted on a 1in2 pad of 2 oz copper b) RJA = 96C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3. Maximum current is calculated as: current limitation is 21A PD R DS(ON) where PD is maximum power dissipation at TC = 25C and RDS(on) is at TJ(max) and VG S = 10V. Package FDD6696/FDU6696 Rev. D (W) FDD6696/FDU6696 Typical Characteristics 100 VGS =10V 80 ID , DRAIN CURRENT (A) 6.0V 4.5V R DS(ON) NORMALIZED , DRAIN-SOURCE ON-RESISTANCE 5.0V 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 4.0V 4.5V 5.0V 6.0V 10V VGS = 3.5V 4.0V 60 3.5V 40 20 3.0V 0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) 0 20 40 60 80 100 ID , DRAIN CURRENT (A) Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 0.022 R DS(ON), ON-RESISTANCE (OHM) 1.8 RDS(ON) NORMALIZED , DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50 ID = 50A VGS = 10V ID = 25A 0.018 0.014 TA = 125 C 0.01 o T A = 25 C 0.006 o 0.002 -25 0 25 50 75 100 o 125 150 175 2 4 6 8 10 TJ , JUNCTION TEMPERATURE ( C) V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature 60 Figure 4. On-Resistance Variation with Gate-to-Source Voltage 100 VGS = 0V VDS = 5V ID, DRAIN CURRENT (A) 40 IS , REVERSE DRAIN CURRENT (A) 10 1 0.1 0.01 0.001 T A = 125 C 25 C -55 C o o o 20 TA =125 C 25 C o o -55 C 0 2 2.5 3 3.5 4 VGS, GATE TO SOURCE VOLTAGE (V) o 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature FDD6696/FDU6696 Rev. D (W) FDD6696/FDU6696 Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 13A 8 20V 6 VD S = 10V 15V 2500 f = 1MHz VGS = 0 V 2000 Ciss CAPACITANCE (pF) 1500 4 1000 Coss 2 500 Crss 0 0 10 20 Q g, GATE CHARGE (nC) 30 40 0 0 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics 1000 R DS(ON) LIMIT 100 ID , DRAIN CURRENT (A) 100s 1ms 10ms 10 10s DC 100ms 1s P(pk), PEAK TRANSIENT POWER (W) 100 Figure 8. Capacitance Characteristics 80 SINGLE PULSE RJ A = 96C/W TA = 25C 60 1 VGS = 10V SINGLE PULSE o RJ A = 96 C/W TA = 25 C 0.01 0.01 o 40 0.1 20 0 0.1 1 10 100 0.01 0.1 1 10 100 1000 VD S, DRAIN-SOURCE VOLTAGE (V) t1 , TIME (sec) Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation 1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.2 0.1 0.1 0.05 0.02 RJA(t) = r(t) * RJA RJA = 96 C/W P(pk) t1 0.01 0.01 SINGLE PULSE t2 TJ - TA = P * R JA(t) Duty Cycle, D = t 1 / t2 0.001 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 11. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDD6696/FDU6696 Rev. D (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx FACT ActiveArray FACT Quiet Series Bottomless FASTa CoolFET FASTr CROSSVOLT FRFET DOME GlobalOptoisolator EcoSPARK GTO E2CMOSTM HiSeC EnSignaTM I2C Across the board. Around the world. The Power Franchise Programmable Active Droop DISCLAIMER ImpliedDisconnect PACMAN POP ISOPLANAR Power247 LittleFET PowerTrencha MicroFET QFET MicroPak QS MICROWIRE QT Optoelectronics MSX Quiet Series MSXPro RapidConfigure OCX RapidConnect OCXPro SILENT SWITCHERa OPTOLOGICa SMART START OPTOPLANAR SPM Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TruTranslation UHC UltraFETa VCX FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I1 |
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